TJ15P04M3 1. 1. 1. 1. applications applications applications applications ? dc-dc converters ? desktop computers 2. 2. 2. 2. features features features features (1) low drain-source on-resistance: r ds(on) = 28 m ? (typ.) (v gs = -10 v) (2) low leakage current: i dss = -10 a (max) (v ds = -40 v) (3) enhancement mode: v th = -0.8 to -2.0 v (v ds = -10 v, i d = -0.1 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packaging and internal circuit 1: gate 2: drain (heatsink) 3: source dpak 4. 4. 4. 4. absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics drain-source voltage gate-source voltage drain current (dc) drain current (pulsed) power dissipation single-pulse avalanche energy avalanche current channel temperature storage temperature (t c = 25 ) (note 1) (note 1) (note 2) symbol v dss v gss i d i dp p d e as i ar t ch t stg rating -40 20 -15 -45 29 29 -15 150 -55 to 150 unit v a w mj a note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook ("handling precautions"/"derating concept and methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). www.freescale.net.cn mosfets silicon p-channel mos (u-mos -h) www.freescale.net.cn 1/8 7 - 3 0 0 2 6 ) ( 7 v 6 l o l f r q 3 & |